An in situ x-ray photoelectron spectroscopy study of the initial stages of rf magnetron sputter deposition of indium tin oxide on p-type Si substrate

The interface between indium tin oxide and p-type silicon is studied by in situ X-ray photoelectron spectroscopy (XPS). This is done by performing XPS without breaking vacuum after deposition of ultrathin layers in sequences. Elemental tin and indium are shown to be present at the interface, both af...

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Bibliographic Details
Published in:Applied physics letters 2013-01, Vol.102 (2)
Main Authors: Rein, M. H., Hohmann, M. V., Thøgersen, A., Mayandi, J., Holt, A. O., Klein, A., Monakhov, E. V.
Format: Article
Language:English
Subjects:
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DEPOSITION
Indium
INDIUM ADDITIONS
Indium tin oxide
INTERFACES
LAYERS
MAGNETRONS
MATERIALS SCIENCE
P-TYPE CONDUCTORS
Photoelectron spectroscopy
SEMICONDUCTOR MATERIALS
SILICON
SILICON OXIDES
Silicon substrates
SPUTTERING
SUBSTRATES
THIN FILMS
TIN
TIN OXIDES
X-RAY PHOTOELECTRON SPECTROSCOPY
X-rays
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Summary:The interface between indium tin oxide and p-type silicon is studied by in situ X-ray photoelectron spectroscopy (XPS). This is done by performing XPS without breaking vacuum after deposition of ultrathin layers in sequences. Elemental tin and indium are shown to be present at the interface, both after 2 and 10 s of deposition. In addition, the silicon oxide layer at the interface is shown to be composed of mainly silicon suboxides rather than silicon dioxide.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4774404