Effect of polarity on Ni/InN interfacial reactions

Ni films on (0001) and (0001¯) InN exhibited different reaction kinetics upon annealing at 673K. Structural and chemical analysis using grazing incidence X-ray diffraction, transmission electron microscopy, and X-ray energy dispersive spectrometry indicated that an interfacial reaction did not occur...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2013-01, Vol.102 (2)
Main Authors: Kragh-Buetow, K. C., Weng, X., Readinger, E. D., Wraback, M., Mohney, S. E.
Format: Article
Language:English
Subjects:
ANNEALING
ATOM-MOLECULE COLLISIONS
CHEMICAL ANALYSIS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Diffraction
INDIUM COMPOUNDS
INTERACTIONS
Interface reactions
LAYERS
MATERIALS SCIENCE
NICKEL
PEROVSKITE
Polarity
REACTION KINETICS
REACTIVITY
SEMICONDUCTOR MATERIALS
Semiconductors
Spectrometry
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X RADIATION
X-RAY DIFFRACTION
X-rays
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Ni films on (0001) and (0001¯) InN exhibited different reaction kinetics upon annealing at 673K. Structural and chemical analysis using grazing incidence X-ray diffraction, transmission electron microscopy, and X-ray energy dispersive spectrometry indicated that an interfacial reaction did not occur between the Ni film and the In-polar (0001) InN layer. However, the N-polar face reacted with Ni to form the Ni3InNx ternary phase with an anti-perovskite structure. The difference in reactivity for Ni on In-face and N-face InN indicates that polarity alters the reaction and may also affect interactions between other metals and group III-nitride semiconductors.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4781768