Modification of organosilicate glasses low-k films under extreme and vacuum ultraviolet radiation

Degradation of chemical composition of porous low-k films under extreme and various vacuum ultraviolet emissions is studied using specially developed sources. It is shown that the most significant damage is induced by Xe line emission (147 nm) in comparison with Ar (106 nm), He (58 nm), and Sn (13.5...

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Bibliographic Details
Published in:Applied physics letters 2013-03, Vol.102 (11)
Main Authors: Rakhimova, T. V., Rakhimov, A. T., Mankelevich, Yu. A., Lopaev, D. V., Kovalev, A. S., Vasil'eva, A. N., Proshina, O. V., Braginsky, O. V., Zyryanov, S. M., Kurchikov, K., Novikova, N. N., Baklanov, M. R.
Format: Article
Language:English
Subjects:
CHEMICAL BONDS
CHEMICAL COMPOSITION
COMPARATIVE EVALUATIONS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CROSS SECTIONS
DAMAGE
DISSOCIATION
EMISSION
GLASS
MATERIALS SCIENCE
MODIFICATIONS
ORGANIC COMPOUNDS
PHOTOLYSIS
PHOTONS
POROUS MATERIALS
THIN FILMS
ULTRAVIOLET RADIATION
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Summary:Degradation of chemical composition of porous low-k films under extreme and various vacuum ultraviolet emissions is studied using specially developed sources. It is shown that the most significant damage is induced by Xe line emission (147 nm) in comparison with Ar (106 nm), He (58 nm), and Sn (13.5 nm) emissions. No direct damage was detected for 193 nm emission. Photoabsorption cross-sections and photodissociation quantum yields were derived for four films under study. 147 nm photons penetrate deeply into low-k films due to smaller photoabsorption cross-section and still have sufficient energy to excite Si-O-Si matrix and break Si-CH3 bonds.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4795792