Photoconductivity of germanium tin alloys grown by molecular beam epitaxy

Photocurrent spectroscopy was used to measure the infrared absorption of germanium-tin alloys grown by molecular beam epitaxy. To study dependence on Sn composition, the photocurrent was measured at 100 K on alloys of Ge1−xSnx with atomic percentages of Sn up to 9.8%. The optical absorption coeffici...

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Bibliographic Details
Published in:Applied physics letters 2013-04, Vol.102 (14)
Main Authors: Coppinger, Matthew, Hart, John, Bhargava, Nupur, Kim, Sangcheol, Kolodzey, James
Format: Article
Language:English
Subjects:
ABSORPTION
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
ENERGY GAP
GERMANIUM ALLOYS
INFRARED SPECTRA
LAYERS
MOLECULAR BEAM EPITAXY
PHOTOCONDUCTIVITY
PHOTOELECTRON SPECTROSCOPY
SEMICONDUCTOR MATERIALS
TIN ALLOYS
ULTRAVIOLET SPECTRA
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Summary:Photocurrent spectroscopy was used to measure the infrared absorption of germanium-tin alloys grown by molecular beam epitaxy. To study dependence on Sn composition, the photocurrent was measured at 100 K on alloys of Ge1−xSnx with atomic percentages of Sn up to 9.8%. The optical absorption coefficient was calculated from the photocurrent, and it was found that the absorption edge and extracted bandgap energy decreased with increasing Sn content. For all Ge1−xSnx samples, a fundamental bandgap below that of bulk Ge was observed, and a bandgap energy as low as 0.624 eV was found for a Sn percentage of 9.8% at 100 K.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4800448