High detection efficiency micro-structured solid-state neutron detector with extremely low leakage current fabricated with continuous p-n junction

• Published in: Applied physics letters 2013-04, Vol.102 (15)
• Main Authors: Huang, Kuan-Chih, Dahal, Rajendra, Lu, James J.-Q., Danon, Yaron, Bhat, Ishwara B.
• Format: Article
• Language: English
• Subjects: CHEMICAL VAPOR DEPOSITION; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CURRENT DENSITY; DENSITY; DIFFUSION; EFFICIENCY; FACE; HELIUM 3; HONEYCOMB STRUCTURES; INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; LEAKAGE CURRENT; NEUTRON DETECTION; NEUTRON DETECTORS; P-N JUNCTIONS; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SILICON; SOLIDS; SPECTRA; THERMAL NEUTRONS
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.4802204

We report the continuous p-n junction formation in honeycomb structured Si diode by in situ boron deposition and diffusion process using low pressure chemical vapor deposition for solid-state thermal neutron detection applications. Optimized diffusion temperature of 800 °C was obtained by current density-voltage characteristics for fabricated p+-n diodes. A very low leakage current density of ∼2 × 10−8 A/cm2 at −1 V was measured for enriched boron filled honeycomb structured neutron detector with a continuous p+-n junction. The neutron detection efficiency for a Maxwellian spectrum incident on the face of the detector was measured under zero bias voltage to be ∼26%. These results are very encouraging for fabrication of large area solid-state neutron detector that could be a viable alternative to 3He tube based technology.