Two-dimensional weak anti-localization in Bi{sub 2}Te{sub 3} thin film grown on Si(111)-(7 Multiplication-Sign 7) surface by molecular beam epitaxy

We report on low temperature transport studies of Bi{sub 2}Te{sub 3} topological insulator thin films grown on Si(111)-(7 Multiplication-Sign 7) surface by molecular beam epitaxy. A sharp increase in the magnetoresistance with magnetic field at low temperature indicates the existence of weak anti-lo...

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Bibliographic Details
Published in:Applied physics letters 2013-04, Vol.102 (16)
Main Authors: Roy, Anupam, Guchhait, Samaresh, Sonde, Sushant, Dey, Rik, Pramanik, Tanmoy, Rai, Amritesh, Movva, Hema C. P., Banerjee, Sanjay K., Colombo, Luigi
Format: Article
Language:English
Subjects:
BISMUTH TELLURIDES
COHERENCE LENGTH
ELECTRON-ELECTRON INTERACTIONS
GROUND STATES
LAYERS
MAGNETIC FIELDS
MAGNETORESISTANCE
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
SILICON
SUBSTRATES
SURFACES
THIN FILMS
TOPOLOGY
TWO-DIMENSIONAL CALCULATIONS
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Summary:We report on low temperature transport studies of Bi{sub 2}Te{sub 3} topological insulator thin films grown on Si(111)-(7 Multiplication-Sign 7) surface by molecular beam epitaxy. A sharp increase in the magnetoresistance with magnetic field at low temperature indicates the existence of weak anti-localization. The measured weak anti-localization effect agrees well with the Hikami-Larkin-Nagaoka model, and the extracted phase coherence length shows a power-law dependence with temperature indicating the existence of a two-dimensional system. An insulating ground state has also been observed at low temperature showing a logarithmic divergence of the resistance that appears to be the influence of electron-electron interaction in a two-dimensional system.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4803018