Two-dimensional weak anti-localization in Bi{sub 2}Te{sub 3} thin film grown on Si(111)-(7 Multiplication-Sign 7) surface by molecular beam epitaxy

We report on low temperature transport studies of Bi{sub 2}Te{sub 3} topological insulator thin films grown on Si(111)-(7 Multiplication-Sign 7) surface by molecular beam epitaxy. A sharp increase in the magnetoresistance with magnetic field at low temperature indicates the existence of weak anti-lo...

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Published in:Applied physics letters 2013-04, Vol.102 (16)
Main Authors: Roy, Anupam, Guchhait, Samaresh, Sonde, Sushant, Dey, Rik, Pramanik, Tanmoy, Rai, Amritesh, Movva, Hema C. P., Banerjee, Sanjay K., Colombo, Luigi
Format: Article
Language:English
Subjects:
BISMUTH TELLURIDES
COHERENCE LENGTH
ELECTRON-ELECTRON INTERACTIONS
GROUND STATES
LAYERS
MAGNETIC FIELDS
MAGNETORESISTANCE
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
SILICON
SUBSTRATES
SURFACES
THIN FILMS
TOPOLOGY
TWO-DIMENSIONAL CALCULATIONS
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container_issue 16
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container_title Applied physics letters
container_volume 102
creator Roy, Anupam
Guchhait, Samaresh
Sonde, Sushant
Dey, Rik
Pramanik, Tanmoy
Rai, Amritesh
Movva, Hema C. P.
Banerjee, Sanjay K.
Colombo, Luigi
description We report on low temperature transport studies of Bi{sub 2}Te{sub 3} topological insulator thin films grown on Si(111)-(7 Multiplication-Sign 7) surface by molecular beam epitaxy. A sharp increase in the magnetoresistance with magnetic field at low temperature indicates the existence of weak anti-localization. The measured weak anti-localization effect agrees well with the Hikami-Larkin-Nagaoka model, and the extracted phase coherence length shows a power-law dependence with temperature indicating the existence of a two-dimensional system. An insulating ground state has also been observed at low temperature showing a logarithmic divergence of the resistance that appears to be the influence of electron-electron interaction in a two-dimensional system.
doi_str_mv 10.1063/1.4803018
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source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); AIP - American Institute of Physics
subjects BISMUTH TELLURIDES
COHERENCE LENGTH
ELECTRON-ELECTRON INTERACTIONS
GROUND STATES
LAYERS
MAGNETIC FIELDS
MAGNETORESISTANCE
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
SILICON
SUBSTRATES
SURFACES
THIN FILMS
TOPOLOGY
TWO-DIMENSIONAL CALCULATIONS
title Two-dimensional weak anti-localization in Bi{sub 2}Te{sub 3} thin film grown on Si(111)-(7 Multiplication-Sign 7) surface by molecular beam epitaxy
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