Direct observation of charge transfer region at interfaces in graphene devices

Nanoscale spectromicroscopic characterizing technique is indispensable for realization of future high-speed graphene transistors. Highly spatially resolved soft X-ray photoelectron microscopy measurements have been performed using our “3D nano-ESCA” (three-dimensional nanoscale electron spectroscopy...

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Bibliographic Details
Published in:Applied physics letters 2013-06, Vol.102 (24)
Main Authors: Nagamura, Naoka, Horiba, Koji, Toyoda, Satoshi, Kurosumi, Shodai, Shinohara, Toshihiro, Oshima, Masaharu, Fukidome, Hirokazu, Suemitsu, Maki, Nagashio, Kosuke, Toriumi, Akira
Format: Article
Language:English
Subjects:
CHARGE EXCHANGE
CHEMICAL ANALYSIS
GRAPHENE
INTERFACES
METALS
NANOSCIENCE AND NANOTECHNOLOGY
NANOSTRUCTURES
SILICON OXIDES
SOFT X RADIATION
SUBSTRATES
THREE-DIMENSIONAL CALCULATIONS
X-RAY PHOTOELECTRON SPECTROSCOPY
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Summary:Nanoscale spectromicroscopic characterizing technique is indispensable for realization of future high-speed graphene transistors. Highly spatially resolved soft X-ray photoelectron microscopy measurements have been performed using our “3D nano-ESCA” (three-dimensional nanoscale electron spectroscopy for chemical analysis) equipment in order to investigate the local electronic states at interfaces in a graphene device structure. We have succeeded in detecting a charge transfer region at the graphene/metal-electrode interface, which extends over ∼500 nm with the energy difference of 60 meV. Moreover, a nondestructive depth profiling reveals the chemical properties of the graphene/SiO2-substrate interface.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4808083