Investigation of the transition layer in 3C-SiC/6H-SiC heterostructures

Transmission electron microscopy and the cathodoluminescence method are used to study the transition region in 3 C -SiC/6 H -SiC heterostructures. It is shown that this region is, as a rule, constituted by alternating 3 C -SiC and 6 H -SiC layers with the possible inclusion of other silicon carbide...

Full description

Saved in:
Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2013-11, Vol.47 (11), p.1539-1543
Main Authors: Lebedev, A. A., Zamorianskaya, M. V., Davydov, S. Yu, Kirilenko, D. A., Lebedev, S. P., Sorokin, L. M., Shustov, D. B., Scheglov, M. P.
Format: Article
Language:English
Subjects:
CATHODOLUMINESCENCE
DECOMPOSITION
LAYERS
Low-Dimensional Systems
Magnetic Materials
Magnetism
MATERIALS SCIENCE
Physics
Physics and Astronomy
Quantum Phenomena
Semiconductor Structures
SILICON CARBIDES
TRANSMISSION ELECTRON MICROSCOPY
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Transmission electron microscopy and the cathodoluminescence method are used to study the transition region in 3 C -SiC/6 H -SiC heterostructures. It is shown that this region is, as a rule, constituted by alternating 3 C -SiC and 6 H -SiC layers with the possible inclusion of other silicon carbide polytypes. An assumption is made that this structure of the transition region can be explained in terms of the model of spinodal decomposition.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782613110134