Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region

Microring cavities (diameter D = 2.7–7 μm) with an active region based on InAs/InGaAs quantum dots are fabricated and their characteristics are studied by the microphotoluminescence method and near-field optical microscopy. A value of 22 000 is obtained for the Q factor of a microring cavity with th...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2013-10, Vol.47 (10), p.1387-1390
Main Authors: Kryzhanovskaya, N. V., Zhukov, A. E., Nadtochy, A. M., Maximov, M. V., Moiseev, E. I., Kulagina, M. M., Savelev, A. V., Arakcheeva, E. M., Lipovskii, A. A., Zubov, F. I., Kapsalis, A., Mesaritakis, C., Syvridis, D., Mintairov, A., Livshits, D.
Format: Article
Language:English
Subjects:
GALLIUM ARSENIDES
INDIUM ARSENIDES
LANTHANUM SELENIDES
Magnetic Materials
Magnetism
MATERIALS SCIENCE
NANOSCIENCE AND NANOTECHNOLOGY
OPTICAL MICROSCOPY
PHOTOLUMINESCENCE
Physics
Physics and Astronomy
Physics of Semiconductor Devices
QUANTUM DOTS
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Summary:Microring cavities (diameter D = 2.7–7 μm) with an active region based on InAs/InGaAs quantum dots are fabricated and their characteristics are studied by the microphotoluminescence method and near-field optical microscopy. A value of 22 000 is obtained for the Q factor of a microring cavity with the diameter D = 6 μm. Lasing up to room temperature is obtained in an optically pumped ring microlaser with a diameter of D = 2.7 μm.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782613100187