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Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region
Microring cavities (diameter D = 2.7–7 μm) with an active region based on InAs/InGaAs quantum dots are fabricated and their characteristics are studied by the microphotoluminescence method and near-field optical microscopy. A value of 22 000 is obtained for the Q factor of a microring cavity with th...
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| Published in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2013-10, Vol.47 (10), p.1387-1390 |
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| Main Authors: | , , , , , , , , , , , , , , |
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| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c355t-84c119f7dcf3db7bc83903d7bbb83428e8aef60d65e45bda571b71e9ea8bdef83 |
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| cites | cdi_FETCH-LOGICAL-c355t-84c119f7dcf3db7bc83903d7bbb83428e8aef60d65e45bda571b71e9ea8bdef83 |
| container_end_page | 1390 |
| container_issue | 10 |
| container_start_page | 1387 |
| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 47 |
| creator | Kryzhanovskaya, N. V. Zhukov, A. E. Nadtochy, A. M. Maximov, M. V. Moiseev, E. I. Kulagina, M. M. Savelev, A. V. Arakcheeva, E. M. Lipovskii, A. A. Zubov, F. I. Kapsalis, A. Mesaritakis, C. Syvridis, D. Mintairov, A. Livshits, D. |
| description | Microring cavities (diameter
D
= 2.7–7 μm) with an active region based on InAs/InGaAs quantum dots are fabricated and their characteristics are studied by the microphotoluminescence method and near-field optical microscopy. A value of 22 000 is obtained for the Q factor of a microring cavity with the diameter
D
= 6 μm. Lasing up to room temperature is obtained in an optically pumped ring microlaser with a diameter of
D
= 2.7 μm. |
| doi_str_mv | 10.1134/S1063782613100187 |
| format | article |
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D
= 2.7–7 μm) with an active region based on InAs/InGaAs quantum dots are fabricated and their characteristics are studied by the microphotoluminescence method and near-field optical microscopy. A value of 22 000 is obtained for the Q factor of a microring cavity with the diameter
D
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D
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D
= 2.7–7 μm) with an active region based on InAs/InGaAs quantum dots are fabricated and their characteristics are studied by the microphotoluminescence method and near-field optical microscopy. A value of 22 000 is obtained for the Q factor of a microring cavity with the diameter
D
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D
= 2.7 μm.</description><subject>GALLIUM ARSENIDES</subject><subject>INDIUM ARSENIDES</subject><subject>LANTHANUM SELENIDES</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>MATERIALS SCIENCE</subject><subject>NANOSCIENCE AND NANOTECHNOLOGY</subject><subject>OPTICAL MICROSCOPY</subject><subject>PHOTOLUMINESCENCE</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Physics of Semiconductor Devices</subject><subject>QUANTUM DOTS</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNp9kF1LwzAUhoMoOKc_wLuA13VJ0zbpZRk6BwPBjysvSpqebhlrMpN04r83pd4Jci7O1_seOA9Ct5TcU8qyxSslBeMiLSijhFDBz9CMkpIkRcbL87EuWDLuL9GV9_sooSLPZujjxdo-CdAfwckwOMAH6bXZYm1wr5WzbmyUPOmgweMvHXZYGrw2lV-szUpWHn8O0oShT1obsFRBnwA72GprrtFFJw8ebn7zHL0_Prwtn5LN82q9rDaJYnkeEpEpSsuOt6pjbcMbJVhJWMubphEsSwUICV1B2iKHLG9amXPacAolSNG00Ak2R3fTXeuDrr3SAdROWWNAhTpNU0oyUUTV_aTaygPU2nQ2OKlitBAftQY6HecVy4TgTESOc0QnQ6TgvYOuPjrdS_ddU1KP0Os_0KMnnTz-OIIDV-_t4Ez8_h_TD_GdhDg</recordid><startdate>20131001</startdate><enddate>20131001</enddate><creator>Kryzhanovskaya, N. V.</creator><creator>Zhukov, A. E.</creator><creator>Nadtochy, A. M.</creator><creator>Maximov, M. V.</creator><creator>Moiseev, E. I.</creator><creator>Kulagina, M. M.</creator><creator>Savelev, A. V.</creator><creator>Arakcheeva, E. M.</creator><creator>Lipovskii, A. A.</creator><creator>Zubov, F. I.</creator><creator>Kapsalis, A.</creator><creator>Mesaritakis, C.</creator><creator>Syvridis, D.</creator><creator>Mintairov, A.</creator><creator>Livshits, D.</creator><general>Springer US</general><general>Springer</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20131001</creationdate><title>Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region</title><author>Kryzhanovskaya, N. V. ; Zhukov, A. E. ; Nadtochy, A. M. ; Maximov, M. V. ; Moiseev, E. I. ; Kulagina, M. M. ; Savelev, A. V. ; Arakcheeva, E. M. ; Lipovskii, A. A. ; Zubov, F. I. ; Kapsalis, A. ; Mesaritakis, C. ; Syvridis, D. ; Mintairov, A. ; Livshits, D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c355t-84c119f7dcf3db7bc83903d7bbb83428e8aef60d65e45bda571b71e9ea8bdef83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>GALLIUM ARSENIDES</topic><topic>INDIUM ARSENIDES</topic><topic>LANTHANUM SELENIDES</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>MATERIALS SCIENCE</topic><topic>NANOSCIENCE AND NANOTECHNOLOGY</topic><topic>OPTICAL MICROSCOPY</topic><topic>PHOTOLUMINESCENCE</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Physics of Semiconductor Devices</topic><topic>QUANTUM DOTS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kryzhanovskaya, N. V.</creatorcontrib><creatorcontrib>Zhukov, A. E.</creatorcontrib><creatorcontrib>Nadtochy, A. M.</creatorcontrib><creatorcontrib>Maximov, M. V.</creatorcontrib><creatorcontrib>Moiseev, E. I.</creatorcontrib><creatorcontrib>Kulagina, M. M.</creatorcontrib><creatorcontrib>Savelev, A. V.</creatorcontrib><creatorcontrib>Arakcheeva, E. M.</creatorcontrib><creatorcontrib>Lipovskii, A. A.</creatorcontrib><creatorcontrib>Zubov, F. I.</creatorcontrib><creatorcontrib>Kapsalis, A.</creatorcontrib><creatorcontrib>Mesaritakis, C.</creatorcontrib><creatorcontrib>Syvridis, D.</creatorcontrib><creatorcontrib>Mintairov, A.</creatorcontrib><creatorcontrib>Livshits, D.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kryzhanovskaya, N. V.</au><au>Zhukov, A. E.</au><au>Nadtochy, A. M.</au><au>Maximov, M. V.</au><au>Moiseev, E. I.</au><au>Kulagina, M. M.</au><au>Savelev, A. V.</au><au>Arakcheeva, E. M.</au><au>Lipovskii, A. A.</au><au>Zubov, F. I.</au><au>Kapsalis, A.</au><au>Mesaritakis, C.</au><au>Syvridis, D.</au><au>Mintairov, A.</au><au>Livshits, D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2013-10-01</date><risdate>2013</risdate><volume>47</volume><issue>10</issue><spage>1387</spage><epage>1390</epage><pages>1387-1390</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>Microring cavities (diameter
D
= 2.7–7 μm) with an active region based on InAs/InGaAs quantum dots are fabricated and their characteristics are studied by the microphotoluminescence method and near-field optical microscopy. A value of 22 000 is obtained for the Q factor of a microring cavity with the diameter
D
= 6 μm. Lasing up to room temperature is obtained in an optically pumped ring microlaser with a diameter of
D
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| subjects | GALLIUM ARSENIDES INDIUM ARSENIDES LANTHANUM SELENIDES Magnetic Materials Magnetism MATERIALS SCIENCE NANOSCIENCE AND NANOTECHNOLOGY OPTICAL MICROSCOPY PHOTOLUMINESCENCE Physics Physics and Astronomy Physics of Semiconductor Devices QUANTUM DOTS |
| title | Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region |
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