Electrical and optical properties of near-surface AlGaAs/InGaAs/AlGaAs quantum wells with different quantum-well depths

A series of AlGaAs/InGaAs/AlGaAs quantum-well heterostructures with different quantum-well depths and approximately the same concentrations of two-dimensional electrons is grown by molecular-beam epitaxy. The built-in electric field in the grown samples is determined from the photoreflectance data a...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2013-09, Vol.47 (9), p.1203-1208
Main Authors: Khabibullin, R. A., Galiev, G. B., Klimov, E. A., Ponomarev, D. S., Vasil’evskii, I. S., Kulbachinskii, V. A., Bokov, P. Yu, Avakyants, L. P., Chervyakov, A. V., Maltsev, P. P.
Format: Article
Language:English
Subjects:
ALUMINIUM ARSENIDES
Analysis
ELECTRIC FIELDS
Epitaxy
GALLIUM ARSENIDES
INDIUM ARSENIDES
Low-Dimensional Systems
Magnetic Materials
Magnetism
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
NANOSCIENCE AND NANOTECHNOLOGY
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
Physics
Physics and Astronomy
Quantum Phenomena
QUANTUM WELLS
Semiconductor Structures
SURFACES
THICKNESS
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Summary:A series of AlGaAs/InGaAs/AlGaAs quantum-well heterostructures with different quantum-well depths and approximately the same concentrations of two-dimensional electrons is grown by molecular-beam epitaxy. The built-in electric field in the grown samples is determined from the photoreflectance data and, on this basis, the energy-band structure in the quantum-well region is calculated. It is found that the highest mobility μ e of two-dimensional electrons is attained in the sample with a barrier-layer thickness of L b = 11 nm. Measurements of the photoluminescence spectra and the band-structure calculations demonstrate that, as the quantum well becomes closer to the surface, the doping profile broadens due to diffusion and segregation processes. The nonmonotonic dependence of μ e on the distance between the surface and the quantum well is explained.
ISSN:1063-7826
1090-6479
DOI:10.1134/S106378261309008X