Influence of helium dilution of silane on microstructure and opto-electrical properties of hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by HW-CVD

[Display omitted] ► nc-Si:H films synthesized using HW-CVD method from silane and helium gas mixture without hydrogen. ► Volume fraction of crystallites and its size in the films decreases with increase in He dilution of SiH4. ► Increase in Urbach energy and defect density with increase in He diluti...

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Bibliographic Details
Published in:Materials research bulletin 2012-11, Vol.47 (11), p.3445-3451
Main Authors: Waman, V.S., Kamble, M.M., Ghosh, S.S., Hawaldar, R.R., Amalnerkar, D.P., Sathe, V.G., Gosavi, S.W., Jadkar, S.R.
Format: Article
Language:English
Subjects:
A. Thin films
ATOMIC FORCE MICROSCOPY
C. Atomic force microscopy
C. Raman spectroscopy
C. X-ray diffraction
CHEMICAL VAPOR DEPOSITION
CRYSTALS
D. Microstructure
DILUTION
ELECTRICAL PROPERTIES
FOURIER TRANSFORMATION
HELIUM
HYDROGEN
MATERIALS SCIENCE
MICROSTRUCTURE
NANOSTRUCTURES
RAMAN SPECTROSCOPY
SILANES
SILICON
THIN FILMS
X-RAY DIFFRACTION
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Summary:[Display omitted] ► nc-Si:H films synthesized using HW-CVD method from silane and helium gas mixture without hydrogen. ► Volume fraction of crystallites and its size in the films decreases with increase in He dilution of SiH4. ► Increase in Urbach energy and defect density with increase in He dilution of SiH4. ► Increasing He dilution, hydrogen bonding in the films shifts from SiH2 and (SiH2)n complexes to SiH. ► Hydrogen content films were found to be
ISSN:0025-5408
1873-4227
DOI:10.1016/j.materresbull.2012.07.008