Low-temperature magnetic characterization of optimum and etch-damaged in-plane magnetic tunnel junctions

We describe low-temperature characterization of magnetic tunnel junctions (MTJs) patterned by reactive ion etching for spin-transfer-torque magnetic random access memory. Magnetotransport measurements of typical MTJs show increasing tunneling magnetoresistance (TMR) and larger coercive fields as tem...

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Bibliographic Details
Published in:Journal of applied physics 2013-09, Vol.114 (11)
Main Authors: Kan, Jimmy J., Lee, Kangho, Gottwald, Matthias, Kang, Seung H., Fullerton, Eric E.
Format: Article
Language:English
Subjects:
COERCIVE FORCE
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DAMAGE
ETCHING
INTERFACES
IONS
MAGNETISM
MAGNETORESISTANCE
MATERIALS SCIENCE
SPUTTERING
STABILITY
SUPERCONDUCTING JUNCTIONS
TUNNEL EFFECT
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Summary:We describe low-temperature characterization of magnetic tunnel junctions (MTJs) patterned by reactive ion etching for spin-transfer-torque magnetic random access memory. Magnetotransport measurements of typical MTJs show increasing tunneling magnetoresistance (TMR) and larger coercive fields as temperature is decreased down to 10 K. However, MTJs selected from the high-resistance population of an MTJ array exhibit stable intermediate magnetic states when measured at low temperature and show TMR roll-off below 100 K. These non-ideal low-temperature behaviors arise from edge damage during the etch process and can have negative impacts on thermal stability of the MTJs.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4820457