Defects in {sup 6}LiInSe{sub 2} neutron detector investigated by photo-induced current transient spectroscopy and photoluminescence

{sup 6}LiInSe{sub 2} is a promising thermal neutron semiconductor detector material. The performance of the detector is affected by the carrier mobility-lifetime products. Therefore, defects that function as carrier recombination centers need to be identified. In this letter, characterization of def...

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Bibliographic Details
Published in:Applied physics letters 2013-08, Vol.103 (9)
Main Authors: Cui, Yunlong, Bhattacharya, Pijush, Buliga, Vladimir, Tupitsyn, Eugene, Rowe, Emmanuel, Wiggins, Brenden, Johnstone, Daniel, Stowe, Ashley, Burger, Arnold, Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235
Format: Article
Language:English
Subjects:
CARRIER LIFETIME
CARRIER MOBILITY
CARRIERS
CRYSTAL DEFECTS
EV RANGE
INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
LITHIUM COMPOUNDS
MATERIALS SCIENCE
NEUTRON DETECTORS
PHOTOCONDUCTIVITY
PHOTOLUMINESCENCE
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
THERMAL NEUTRONS
TRANSIENTS
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Description
Summary:{sup 6}LiInSe{sub 2} is a promising thermal neutron semiconductor detector material. The performance of the detector is affected by the carrier mobility-lifetime products. Therefore, defects that function as carrier recombination centers need to be identified. In this letter, characterization of defect levels in {sup 6}LiInSe{sub 2} by photo-induced current transient spectroscopy (PICTS) and photoluminescence is reported. PICTS measurements revealed electron-related defects located at 0.22, 0.36, and 0.55 eV and hole-related defects at 0.19, 0.30, and 0.73 eV. Free exciton and donor-acceptor pairs (DAP) emissions were observed. The PICTS defect level values are consistent with those extracted from DAP transitions.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4819733