Effect of Mn doping on the structural, optical, and magnetic properties of In{sub 2}O{sub 3} films

• Published in: Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2013-11, Vol.31 (6)
• Main Authors: Wang, Shiqi, An, Yukai, Duan, Lingshen, Liu, Huarui, Liu, Jiwen, Wu, Zhonghua
• Format: Article
• Language: English
• Subjects: CARRIER DENSITY; CONCENTRATION RATIO; DOPED MATERIALS; FERROMAGNETIC MATERIALS; FERROMAGNETISM; INDIUM IONS; INDIUM OXIDES; MAGNETIC PROPERTIES; MAGNETRONS; MANGANESE COMPOUNDS; MANGANESE IONS; MATERIALS SCIENCE; RADIOWAVE RADIATION; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; VACANCIES
• ISSN: 0734-2101; 1520-8559
• DOI: 10.1116/1.4824163

(In{sub 1−x}Mn{sub x}){sub 2}O{sub 3} films were grown by radio frequency-magnetron sputtering technique. Effect of Mn doping on the structural, optical, and magnetic properties of films is investigated systematically. The detailed structure analyses suggest that Mn ions substitute for In{sup 3+} sites of the In{sub 2}O{sub 3} lattice in the valence of +2 states, and Mn-related secondary phases or clusters as the source of ferromagnetism is safely ruled out. All films show typical room temperature ferromagnetism. The saturation magnetization M{sub s} increases first, and then decreases, while carrier concentration n{sub c} decreases monotonically with Mn doping, implying that the ferromagnetism is not directly induced by the mediated carriers. The optical bandgap E{sub g} of films decreases monotonically with the increase of Mn concentration, and there exists a linear functional dependence between E{sub g} and n{sub c}{sup 2/3}, which is consistent with Burstein-Moss shift arguments. It can be concluded that the ferromagnetic order in Mn-doped In{sub 2}O{sub 3} films is intrinsic, arising from Mn atoms substitution for the In sites of In{sub 2}O{sub 3} lattice. The oxygen vacancies play a mediation role on the ferromagnetic couplings between the Mn ions.