Synthesis, characterization and electrostatic properties of WS{sub 2} nanostructures

We report the direct growth of atomically thin WS{sub 2} nanoplates and nanofilms on the SiO{sub 2}/Si (300 nm) substrate by vapor phase deposition method without any catalyst. The WS{sub 2} nanostructures were systematically characterized by optical microscopy, scanning electron microscopy, Raman m...

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Bibliographic Details
Published in:AIP advances 2014-05, Vol.4 (5)
Main Authors: Fan, Yinping, Hao, Guolin, Luo, Siwei, Qi, Xiang, Li, Hongxing, Ren, Long, Zhong, Jianxin, Laboratory for Quantum Engineering and Micro-Nano Energy Technology and Faculty of Materials and Optoelectronic Physics, Xiangtan University, Hunan 411105
Format: Article
Language:English
Subjects:
ATOMIC FORCE MICROSCOPY
CATALYSTS
DEPOSITION
MATERIALS SCIENCE
NANOSCIENCE AND NANOTECHNOLOGY
NANOSTRUCTURES
OPTICAL MICROSCOPY
SCANNING ELECTRON MICROSCOPY
SILICON OXIDES
SUBSTRATES
SURFACES
SYNTHESIS
TUNGSTEN SULFIDES
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Summary:We report the direct growth of atomically thin WS{sub 2} nanoplates and nanofilms on the SiO{sub 2}/Si (300 nm) substrate by vapor phase deposition method without any catalyst. The WS{sub 2} nanostructures were systematically characterized by optical microscopy, scanning electron microscopy, Raman microscopy and atomic force microscopy. We found that growth time and growth temperature play important roles in the morphology of WS{sub 2} nanostructures. Moreover, by using Kelvin probe force microscopy, we found that the WS{sub 2} nanoplates exhibit uniform surface and charge distributions less than 10 mV fluctuations. Our results may apply to the study of other transition metal dichalcogenides by vapor phase deposition method.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4875915