Nanoscale-accuracy transfer printing of ultra-thin AlInGaN light-emitting diodes onto mechanically flexible substrates

The transfer printing of 2 μm-thick aluminum indium gallium nitride (AlInGaN) micron-size light-emitting diodes with 150 nm (±14 nm) minimum spacing is reported. The thin AlInGaN structures were assembled onto mechanically flexible polyethyleneterephthalate/polydimethylsiloxane substrates in a repre...

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Bibliographic Details
Published in:Applied physics letters 2013-12, Vol.103 (25)
Main Authors: Trindade, A. J., Guilhabert, B., Massoubre, D., Zhu, D., Laurand, N., Gu, E., Watson, I. M., Humphreys, C. J., Dawson, M. D.
Format: Article
Language:English
Subjects:
ACCURACY
ALUMINIUM
Aluminum
Applied physics
Arrays
CURRENT DENSITY
GALLIUM NITRIDES
INDIUM
Indium gallium nitrides
LIGHT EMITTING DIODES
Nanocomposites
Nanomaterials
NANOSCIENCE AND NANOTECHNOLOGY
Nanostructure
NANOSTRUCTURES
Organic light emitting diodes
Polydimethylsiloxane
SUBSTRATES
Transfer printing
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Summary:The transfer printing of 2 μm-thick aluminum indium gallium nitride (AlInGaN) micron-size light-emitting diodes with 150 nm (±14 nm) minimum spacing is reported. The thin AlInGaN structures were assembled onto mechanically flexible polyethyleneterephthalate/polydimethylsiloxane substrates in a representative 16 × 16 array format using a modified dip-pen nano-patterning system. Devices in the array were positioned using a pre-calculated set of coordinates to demonstrate an automated transfer printing process. Individual printed array elements showed blue emission centered at 486 nm with a forward-directed optical output power up to 80 μW (355 mW/cm2) when operated at a current density of 20 A/cm2.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4851875