Atomic layer deposition of Al{sub 2}O{sub 3} on germanium-tin (GeSn) and impact of wet chemical surface pre-treatment

GeSn is quickly emerging as a potential candidate for high performance Si-compatible transistor technology. Fabrication of high-ĸ gate stacks on GeSn with good interface properties is essential for realizing high performance field effect transistors based on this material system. We demonstrate an e...

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Bibliographic Details
Published in:Applied physics letters 2013-12, Vol.103 (24)
Main Authors: Gupta, Suyog, Chen, Robert, Harris, James S., Saraswat, Krishna C.
Format: Article
Language:English
Subjects:
ALLOYS
ALUMINIUM OXIDES
DENSITY
FABRICATION
FIELD EFFECT TRANSISTORS
GERMANIUM
INTERFACES
MATERIALS SCIENCE
PASSIVATION
SURFACE TREATMENTS
SURFACES
TIN
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Summary:GeSn is quickly emerging as a potential candidate for high performance Si-compatible transistor technology. Fabrication of high-ĸ gate stacks on GeSn with good interface properties is essential for realizing high performance field effect transistors based on this material system. We demonstrate an effective surface passivation scheme for n-Ge{sub 0.97}Sn{sub 0.03} alloy using atomic layer deposition (ALD) of Al{sub 2}O{sub 3}. The effect of pre-ALD wet chemical surface treatment is analyzed and shown to be critical in obtaining a good quality interface between GeSn and Al{sub 2}O{sub 3}. Using proper surface pre-treatment, mid-gap trap density for the Al{sub 2}O{sub 3}/GeSn interface of the order of 10{sup 12} cm{sup −2} has been achieved.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4850518