SU-8 doped and encapsulated n-type graphene nanomesh with high air stability

N-type doping of graphene with long-term chemical stability in air represents a significant challenge for practical application of graphene electronics. This paper reports a reversible doping method to achieve highly stable n-type graphene nanomeshes, in which the SU-8 photoresist simultaneously ser...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2013-12, Vol.103 (23)
Main Authors: Al-Mumen, Haider, Dong, Lixin, Li, Wen
Format: Article
Language:English
Subjects:
AIR
Applied physics
Carbon
DOPED MATERIALS
Doping
ELECTRONS
Encapsulation
GRAPHENE
NANOSCIENCE AND NANOTECHNOLOGY
Organic chemistry
Photoresists
RAMAN SPECTRA
STABILITY
Structural damage
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:N-type doping of graphene with long-term chemical stability in air represents a significant challenge for practical application of graphene electronics. This paper reports a reversible doping method to achieve highly stable n-type graphene nanomeshes, in which the SU-8 photoresist simultaneously serves as an effective electron dopant and an excellent encapsulating layer. The chemically stable n-type characteristics of the SU-8 doped graphene were evaluated in air using their Raman spectra, electrical transport properties, and electronic band structures. The SU-8 doping does minimum damage to the hexagonal carbon lattice of graphene and is completely reversible by removing the uncrosslinked SU-8 resist.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4841615