On the importance of AlGaN electron blocking layer design for GaN-based light-emitting diodes

There has been confusion regarding the usefulness of AlGaN electron blocking layer (EBL) in GaN-based light-emitting diodes (LEDs) with some published experimental data indicating that the LEDs without EBL performed better than those with it. InGaN/GaN LEDs have been investigated numerically to anal...

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Bibliographic Details
Published in:Applied physics letters 2013-12, Vol.103 (23)
Main Authors: Sheng Xia, Chang, Simon Li, Z. M., Sheng, Yang
Format: Article
Language:English
Subjects:
Aluminum
Aluminum gallium nitrides
Applied physics
CHANNELING
Composition
Computer simulation
DEPLETION LAYER
DESIGN
ELECTRONS
GALLIUM NITRIDES
Indium gallium nitrides
INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
LIGHT EMITTING DIODES
MATERIALS SCIENCE
Organic light emitting diodes
POLARIZATION
SIMULATION
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Summary:There has been confusion regarding the usefulness of AlGaN electron blocking layer (EBL) in GaN-based light-emitting diodes (LEDs) with some published experimental data indicating that the LEDs without EBL performed better than those with it. InGaN/GaN LEDs have been investigated numerically to analyze its actual effect in these devices. Simulation results show that hole blocking effect of EBL mainly determines the effectiveness of using it which is more sensitive to its Al composition, band offset ratio, and polarization charges. It is found that the choice of Al composition is critical for EBL to improve the optical performance of GaN-based LEDs.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4839417