Strong carrier localization and diminished quantum-confined Stark effect in ultra-thin high-indium-content InGaN quantum wells with violet light emission

Here, we report on the optical and structural characteristics of violet-light-emitting, ultra-thin, high-Indium-content (UTHI) InGaN/GaN multiple quantum wells (MQWs), and of conventional low-In-content MQWs, which both emit at similar emission energies though having different well thicknesses and I...

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Bibliographic Details
Published in:Applied physics letters 2013-11, Vol.103 (22)
Main Authors: Ko, Suk-Min, Kwack, Ho-Sang, Park, Chunghyun, Yoo, Yang-Seok, Kwon, Soon-Yong, Jin Kim, Hee, Yoon, Euijoon, Si Dang, Le, Cho, Yong-Hoon
Format: Article
Language:English
Subjects:
Applied physics
CARRIERS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
EMISSION
GALLIUM NITRIDES
INDIUM
Indium gallium nitrides
Inhomogeneity
Light emission
Localization
QUANTUM EFFICIENCY
QUANTUM WELLS
STARK EFFECT
THICKNESS
Ultraviolet spectra
Variation
VISIBLE RADIATION
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Summary:Here, we report on the optical and structural characteristics of violet-light-emitting, ultra-thin, high-Indium-content (UTHI) InGaN/GaN multiple quantum wells (MQWs), and of conventional low-In-content MQWs, which both emit at similar emission energies though having different well thicknesses and In compositions. The spatial inhomogeneity of In content, and the potential fluctuation in high-efficiency UTHI MQWs were compared to those in the conventional low-In-content MQWs. We conclude that the UTHI InGaN MQWs are a promising structure for achieving better quantum efficiency in the visible and near-ultraviolet spectral range, owing to their strong carrier localization and reduced quantum-confined Stark effect.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4833917