Trap states in AlGaN channel high-electron-mobility transistors

Frequency dependent capacitance and conductance measurements were performed to analyze the trap states in the AlGaN channel high-electron-mobility transistors (HEMTs). The trap state density in the AlGaN channel HEMTs decreases from 1.26 × 1013 cm−2eV−1 at the energy of 0.33 eV to 4.35 × 1011 cm−2eV...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2013-11, Vol.103 (21)
Main Authors: Zhao, ShengLei, Zhang, Kai, Ha, Wei, Chen, YongHe, Zhang, Peng, Zhang, JinCheng, Ma, XiaoHua, Hao, Yue
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Applied physics
ATOMIC AND MOLECULAR PHYSICS
CAPACITANCE
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Current leakage
ELECTRON MOBILITY
ENERGY LEVELS
GALLIUM NITRIDES
Gates
High electron mobility transistors
LEAKAGE CURRENT
Resistance
Semiconductor devices
TRANSISTORS
TRAPS
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Frequency dependent capacitance and conductance measurements were performed to analyze the trap states in the AlGaN channel high-electron-mobility transistors (HEMTs). The trap state density in the AlGaN channel HEMTs decreases from 1.26 × 1013 cm−2eV−1 at the energy of 0.33 eV to 4.35 × 1011 cm−2eV−1 at 0.40 eV. Compared with GaN channel HEMTs, the trap states in the AlGaN channel HEMTs have deeper energy levels. The trap with deeper energy levels in the AlGaN channel HEMTs is another reason for the reduction of the reverse gate leakage current besides the higher Schottky barrier height.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4832482