p -type ZnS:N nanowires: Low-temperature solvothermal doping and optoelectronic properties

Nitrogen doped p-type ZnS nanowires (NWs) were realized using thermal decomposition of triethylamine at a mild temperature. Field-effect transistors made from individual ZnS:N NWs revealed typical p-type conductivity behavior, with a hole mobility of 3.41 cm2V−1s−1 and a hole concentration of 1.67 ×...

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Bibliographic Details
Published in:Applied physics letters 2013-11, Vol.103 (21)
Main Authors: Wang, Ming-Zheng, Xie, Wei-Jie, Hu, Han, Yu, Yong-Qiang, Wu, Chun-Yan, Wang, Li, Luo, Lin-Bao
Format: Article
Language:English
Subjects:
Applied physics
DOPED MATERIALS
Doping
Feasibility studies
FIELD EFFECT TRANSISTORS
Hole mobility
IRRADIATION
Light irradiation
Low temperature
NANOSCIENCE AND NANOTECHNOLOGY
Nanowires
Nitrogen
Optoelectronic devices
QUANTUM WIRES
Selectivity
Semiconductor devices
SEMICONDUCTOR MATERIALS
Thermal decomposition
Triethylamine
ULTRAVIOLET RADIATION
ZINC SULFIDES
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Summary:Nitrogen doped p-type ZnS nanowires (NWs) were realized using thermal decomposition of triethylamine at a mild temperature. Field-effect transistors made from individual ZnS:N NWs revealed typical p-type conductivity behavior, with a hole mobility of 3.41 cm2V−1s−1 and a hole concentration of 1.67 × 1017 cm−3, respectively. Further analysis found that the ZnS:N NW is sensitive to UV light irradiation with high responsivity, photoconductive gain, and good spectral selectivity. The totality of this study suggests that the solvothermal doping method is highly feasible to dope one dimensional semiconductor nanostructures for optoelectronic devices application.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4833275