Encapsulated gate-all-around InAs nanowire field-effect transistors

We report the fabrication of lateral gate-all-around InAs nanowire field-effect transistors whose gate overlaps the source and drain electrodes and thus fully encapsulates the nanowire channel. They feature large drive current and transconductance that surpass those of conventional non-gate-overlap...

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Bibliographic Details
Published in:Applied physics letters 2013-11, Vol.103 (21)
Main Authors: Sasaki, Satoshi, Tateno, Kouta, Zhang, Guoqiang, Suominen, Henri, Harada, Yuichi, Saito, Shiro, Fujiwara, Akira, Sogawa, Tetsuomi, Muraki, Koji
Format: Article
Language:English
Subjects:
Applied physics
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
CORRELATIONS
CURRENTS
DEPOSITION
DIELECTRIC MATERIALS
Drains
ELECTRIC POTENTIAL
ELECTRODES
Encapsulation
ETCHING
FABRICATION
FIELD EFFECT TRANSISTORS
Gates
INDIUM ARSENIDES
Nanocomposites
Nanomaterials
Nanowires
Semiconductor devices
Threshold voltage
Transconductance
Transistors
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Summary:We report the fabrication of lateral gate-all-around InAs nanowire field-effect transistors whose gate overlaps the source and drain electrodes and thus fully encapsulates the nanowire channel. They feature large drive current and transconductance that surpass those of conventional non-gate-overlap devices. The improved device characteristics can be attributed to the elimination of access resistance associated with ungated segments between the gate and source/drain electrodes. Our data also reveal a correlation between the normalized transconductance and the threshold voltage, which points to a beneficial effect of our wet-etching procedure performed prior to the atomic-layer-deposition of the gate dielectric.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4832058