The dependence of ZnO photoluminescence efficiency on excitation conditions and defect densities

The quantum efficiencies of both the band edge and deep-level defect emission from annealed ZnO powders were measured as a function of excitation fluence and wavelength from a tunable sub-picosecond source. A simple model of excitonic decay reproduces the observed excitation dependence of rate const...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2013-11, Vol.103 (20)
Main Authors: Simmons, Jay G., Foreman, John V., Liu, Jie, Everitt, Henry O.
Format: Article
Language:English
Subjects:
ANNEALING
Applied physics
Decay rate
Defect annealing
Defects
Density
Dependence
Emission
Estimating
EXCITATION
Fluence
MATERIALS SCIENCE
Phosphors
PHOTOLUMINESCENCE
POWDERS
QUANTUM EFFICIENCY
Rate constants
REACTION KINETICS
Zinc oxide
ZINC OXIDES
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The quantum efficiencies of both the band edge and deep-level defect emission from annealed ZnO powders were measured as a function of excitation fluence and wavelength from a tunable sub-picosecond source. A simple model of excitonic decay reproduces the observed excitation dependence of rate constants and associated trap densities for all radiative and nonradiative processes. The analysis explores how phosphor performance deteriorates as excitation fluence and energy increase, provides an all-optical approach for estimating the number density of defects responsible for deep-level emission, and yields new insights for designing efficient ZnO-based phosphors.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4829745