Room temperature excitonic recombination in GaInN/GaN quantum wells

The dependence of radiative and nonradiative lifetimes on the excess carrier density in GaInN/GaN quantum wells is studied via time-resolved photoluminescence spectroscopy over a wide range of excitation densities. Our results differ from the predictions of simple free-carrier models: density indepe...

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Bibliographic Details
Published in:Applied physics letters 2013-11, Vol.103 (20), p.202106
Main Authors: Langer, Torsten, Chernikov, Alexey, Kalincev, Dimitri, Gerhard, Marina, Bremers, Heiko, Rossow, Uwe, Koch, Martin, Hangleiter, Andreas
Format: Article
Language:English
Subjects:
Applied physics
Augers
CARRIER DENSITY
Carrier models
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
DENSITY
Excitation
GALLIUM NITRIDES
HIGH ROOMS
Inverse
PHOTOLUMINESCENCE
QUANTUM WELLS
Radiative lifetime
RECOMBINATION
Room temperature
SPECTROSCOPY
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
TIME RESOLUTION
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Summary:The dependence of radiative and nonradiative lifetimes on the excess carrier density in GaInN/GaN quantum wells is studied via time-resolved photoluminescence spectroscopy over a wide range of excitation densities. Our results differ from the predictions of simple free-carrier models: density independent radiative lifetimes clearly evidence the excitonic nature even at room temperature. At high densities, nonradiative lifetimes are weakly temperature dependent and proportional to the inverse of the density, implying an excitonic, threshold-less Auger process. Furthermore, in the intermediate density regime between low and high injection, an increase of the nonradiative lifetimes is observed, which is typical for Shockley-Read-Hall-type recombination.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4830366