Thermal conductivity of ultra-thin chemical vapor deposited hexagonal boron nitride films

Thermal conductivity of freestanding 10 nm and 20 nm thick chemical vapor deposited hexagonal boron nitride films was measured using both steady state and transient techniques. The measured value for both thicknesses, about 100 ± 10 W m−1 K−1, is lower than the bulk basal plane value (390 W m−1 K−1)...

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Bibliographic Details
Published in:Applied physics letters 2014-01, Vol.104 (1)
Main Authors: Alam, M. T., Bresnehan, M. S., Robinson, J. A., Haque, M. A.
Format: Article
Language:English
Subjects:
Applied physics
Basal plane
Boron
Boron nitride
BORON NITRIDES
CHEMICAL VAPOR DEPOSITION
DIELECTRIC MATERIALS
Heat conductivity
Heat transfer
MATERIALS SCIENCE
MICROSTRUCTURE
Nanoelectronics
Organic chemistry
Silicones
THERMAL CONDUCTIVITY
Thermal management
THIN FILMS
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Summary:Thermal conductivity of freestanding 10 nm and 20 nm thick chemical vapor deposited hexagonal boron nitride films was measured using both steady state and transient techniques. The measured value for both thicknesses, about 100 ± 10 W m−1 K−1, is lower than the bulk basal plane value (390 W m−1 K−1) due to the imperfections in the specimen microstructure. Impressively, this value is still 100 times higher than conventional dielectrics. Considering scalability and ease of integration, hexagonal boron nitride grown over large area is an excellent candidate for thermal management in two dimensional materials-based nanoelectronics.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4861468