Experimental verification of effects of barrier dopings on the internal electric fields and the band structure in InGaN/GaN light emitting diodes

We experimentally clarify the effects of barrier dopings on the polarization induced electric fields and the band structure in InGaN/GaN blue light emitting diodes. Both effects were independently verified by using electric field modulated reflectance and capacitance-voltage measurement. It is shown...

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Bibliographic Details
Published in:Applied physics letters 2014-03, Vol.104 (12)
Main Authors: Song, Jung-Hoon, Kim, Tae-Soo, Park, Ki-Nam, Lee, Jin-Gyu, Hong, Soon-Ku, Cho, Sung-Royng, Lee, Seogwoo, Whan Cho, Meoung
Format: Article
Language:English
Subjects:
Applied physics
Band structure of solids
Barriers
CAPACITANCE
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Depletion
DIFFUSION BARRIERS
DOPED MATERIALS
Doping
ELECTRIC FIELDS
Electrical measurement
GALLIUM NITRIDES
Indium gallium nitrides
LIGHT EMITTING DIODES
MATERIALS SCIENCE
Organic light emitting diodes
Polarization
QUANTUM WELLS
Reflectance
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Summary:We experimentally clarify the effects of barrier dopings on the polarization induced electric fields and the band structure in InGaN/GaN blue light emitting diodes. Both effects were independently verified by using electric field modulated reflectance and capacitance-voltage measurement. It is shown that the Si barrier doping does reduce the polarization induced electric field in the quantum wells. But the benefit of Si-doping is nullified by modification of the band structure and depletion process. With increased number of doped barriers, smaller number of quantum wells remains in the depletion region at the onset of the diffusion process, which can reduce the effective active volume and enhance the electron overflow.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4870256