Ultrathin, epitaxial cerium dioxide on silicon

It is shown that ultrathin, highly ordered, continuous films of cerium dioxide may be prepared on silicon following substrate prepassivation using an atomic layer of chlorine. The as-deposited, few-nanometer-thin Ce2O3 film may very effectively be converted at room temperature to almost fully oxidiz...

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Bibliographic Details
Published in:Applied physics letters 2014-03, Vol.104 (13)
Main Authors: Flege, Jan Ingo, Kaemena, Björn, Höcker, Jan, Bertram, Florian, Wollschläger, Joachim, Schmidt, Thomas, Falta, Jens
Format: Article
Language:English
Subjects:
Applied physics
CERIUM OXIDES
CHLORINE
Dioxides
EPITAXY
HARD X RADIATION
MATERIALS SCIENCE
Oxidation
Photoelectric emission
PHOTOEMISSION
SILICON
Silicon substrates
TEMPERATURE RANGE 0273-0400 K
X ray spectra
X-RAY DIFFRACTION
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Summary:It is shown that ultrathin, highly ordered, continuous films of cerium dioxide may be prepared on silicon following substrate prepassivation using an atomic layer of chlorine. The as-deposited, few-nanometer-thin Ce2O3 film may very effectively be converted at room temperature to almost fully oxidized CeO2 by simple exposure to air, as demonstrated by hard X-ray photoemission spectroscopy and X-ray diffraction. This post-oxidation process essentially results in a negligible loss in film crystallinity and interface abruptness.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4870585