High resolution InSb quantum well ballistic nanosensors for room temperature applications

We report the room temperature operation of a quasi-ballistic InSb quantum well Hall sensor that exhibits a high frequency sensitivity of 560nT/√Hz at 20uA bias current. The device utilizes a partitioned buffer layer design that suppresses leakage currents through the mesa floor and can sustain larg...

Full description

Saved in:
Bibliographic Details
Main Authors: Gilbertson, Adam, Lambert, C J, Solin, S A, Cohen, L F
Format: Conference Proceeding
Language:English
Subjects:
Buffer layers
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CURRENT DENSITY
Hall effect
Indium antimonide
INDIUM ANTIMONIDES
Intermetallic compounds
LEAKAGE CURRENT
NANOSCIENCE AND NANOTECHNOLOGY
Nanosensors
QUANTUM WELLS
Room temperature
TEMPERATURE RANGE 0273-0400 K
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report the room temperature operation of a quasi-ballistic InSb quantum well Hall sensor that exhibits a high frequency sensitivity of 560nT/√Hz at 20uA bias current. The device utilizes a partitioned buffer layer design that suppresses leakage currents through the mesa floor and can sustain large current densities.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.4848310