Theory of the electronic structure of dilute bismide and bismide-nitride alloys of GaAs: Tight-binding and k.p models

The addition of dilute concentrations of bismuth (Bi) into GaAs to form GaBixAs1−x alloys results in a large reduction of the band gap energy (Eg) accompanied by a significant increase of the spin-orbit-splitting energy (ΔSO), leading to an Eg < ΔSO regime for x ∼ 10% which is technologically rel...

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Bibliographic Details
Main Authors: Usman Muhammad, Broderick, Christopher A, O'Reilly, Eoin P
Format: Conference Proceeding
Language:English
Subjects:
ABSORPTION SPECTROSCOPY
ALLOYS
Binding
BISMUTH
Dilution
ELECTRONIC STRUCTURE
Energy gap
FLEXIBILITY
GALLIUM ARSENIDES
MATERIALS SCIENCE
Photonics
QUATERNARY ALLOY SYSTEMS
Quaternary alloys
Reduction
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Summary:The addition of dilute concentrations of bismuth (Bi) into GaAs to form GaBixAs1−x alloys results in a large reduction of the band gap energy (Eg) accompanied by a significant increase of the spin-orbit-splitting energy (ΔSO), leading to an Eg < ΔSO regime for x ∼ 10% which is technologically relevant for the design of highly efficient photonic devices. The quaternary alloy GaBixNyAs1−x−y offers further flexibility for band gap tuning, because both nitrogen and bismuth can independently induce band gap reduction. This work reports sp3s* tight binding and 14-band k⋅p models for the study of the electronic structure of GaBixAs1−x and GaBixNyAs1−x−y alloys. Our results are in good agreement with the available experimental data.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.4848265