Spin-polarized photoemission from SiGe heterostructures

We apply the principles of Optical Orientation to measure by Mott polarimetry the spin polarization of electrons photoemitted from different group-IV heterostructures. The maximum measured spin polarization, obtained from a Ge/Si0.31Ge0.69 strained film, undoubtedly exceeds the maximum value of 50%...

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Bibliographic Details
Main Authors: Ferrari, A, Bottegoni, F, Isella, G, Cecchi, S, Chrastina, D, Finazzi, M, Ciccacci, F
Format: Conference Proceeding
Language:English
Subjects:
Compressive properties
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Electron spin
Electrons
GERMANIUM SILICIDES
Heterostructures
Photoelectric emission
PHOTOEMISSION
POLARIMETRY
Polarization (spin alignment)
SPIN ORIENTATION
STRAINS
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Summary:We apply the principles of Optical Orientation to measure by Mott polarimetry the spin polarization of electrons photoemitted from different group-IV heterostructures. The maximum measured spin polarization, obtained from a Ge/Si0.31Ge0.69 strained film, undoubtedly exceeds the maximum value of 50% attainable in bulk structures. The explanation we give for this result lies in the enhanced band orbital mixing between light hole and split-off valence bands as a consequence of the compressive strain experienced by the thin Ge layer.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.4848412