Emission of terahertz radiation from GaN/AlGaN heterostructure under electron heating in lateral electric field

Spontaneous emission of terahertz radiation from modulation-doped AlGaN/GaN heterostructure under conditions of heating of a two-dimensional electron gas in the lateral electric field has been studied. The experimental data on the field dependence of the integral intensity of THz emission is compare...

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Bibliographic Details
Main Authors: Shalygin, V A, Vorobjev, L E, Firsov, D A, Sofronov, A N, Melentyev, G A, Lundin, W V, Sakharov, A V, Tsatsulnikov, A F
Format: Conference Proceeding
Language:English
Subjects:
Aluminum gallium nitrides
Blackbody
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DOPED MATERIALS
ELECTRIC FIELDS
Electron energy
ELECTRON GAS
ELECTRON TEMPERATURE
ELECTRONS
EMISSION
GALLIUM NITRIDES
Heating
Heterostructures
SIMULATION
Spontaneous emission
Temperature dependence
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Summary:Spontaneous emission of terahertz radiation from modulation-doped AlGaN/GaN heterostructure under conditions of heating of a two-dimensional electron gas in the lateral electric field has been studied. The experimental data on the field dependence of the integral intensity of THz emission is compared with the theoretical simulation of blackbody-like emission from hot 2D electrons. Complementary transport measurements have been carried out to determine the dependence of effective electron temperature on electric field.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.4848479