The structural parameters of self-assembled quantum dots determined from the optical spectra

Structural parameters of InGaAs/GaAs self-assembled quantum dots (SAQDs), which were grown using In-flush technique, were deduced using optical spectroscopy combined with computer modeling. The results are in excellent agreement with the experimental data obtained from transmission electron microsco...

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Bibliographic Details
Main Authors: Hong Boon Hon, Tinkler, Lloyd, Beaumont, Matthew, Rybchenko, Sergey I, Itskevich, Igor E, Haywood, Stephanie K, Hugues Maxime
Format: Conference Proceeding
Language:English
Subjects:
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Electrons
GALLIUM ARSENIDES
INDIUM ARSENIDES
Indium gallium arsenides
Parameters
QUANTUM DOTS
Self-assembly
SPECTRA
SPECTROSCOPY
Spectrum analysis
Structural analysis
TRANSMISSION ELECTRON MICROSCOPY
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Summary:Structural parameters of InGaAs/GaAs self-assembled quantum dots (SAQDs), which were grown using In-flush technique, were deduced using optical spectroscopy combined with computer modeling. The results are in excellent agreement with the experimental data obtained from transmission electron microscopy. The developed approach suggests a promising alternative to structural characterization methods for SAQDs.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.4848507