Ab initio studies of early stages of AlN and GaN growth on 4H-SiC

Processes of aluminum and gallium adsorption on Si- and C-terminated 4H-SiC{0001} surfaces have been studied within the DFT framework. Al and Ga coverages ranging from a submonolayer to one monolayer have been considered. The results show that Al binds more strongly to both surfaces than Ga and the...

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Bibliographic Details
Main Authors: Wachowicz, E, Sznajder, M, Kędroń, N, Majewski, J A
Format: Conference Proceeding
Language:English
Subjects:
ADSORPTION
ALUMINIUM
ALUMINIUM NITRIDES
Aluminum
Charge transfer
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
GALLIUM
GALLIUM NITRIDES
Lattice sites
Monolayers
Silicon carbide
SILICON CARBIDES
SUBSTRATES
SURFACES
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Summary:Processes of aluminum and gallium adsorption on Si- and C-terminated 4H-SiC{0001} surfaces have been studied within the DFT framework. Al and Ga coverages ranging from a submonolayer to one monolayer have been considered. The results show that Al binds more strongly to both surfaces than Ga and the binding of both metals is stronger to the C-terminated than to Si-terminated surface of SiC. The lateral lattice sites occupied by Al and Ga atoms at one monolayer are different and it is due to a different charge transfer from metal to the substrate.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.4848282