Nonradiative recombination mechanisms in InGaN/GaN-based light-emitting diodes investigated by temperature-dependent measurements

Two kinds of InGaN-based light-emitting diodes (LEDs) are investigated to understand the nonradiative carrier recombination processes. Various temperature-dependent measurements such as external quantum efficiency, current-voltage, and electroluminescence spectra are utilized from 50 to 300 K. Based...

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Bibliographic Details
Published in:Applied physics letters 2014-04, Vol.104 (15)
Main Authors: Han, Dong-Pyo, Zheng, Dong-Guang, Oh, Chan-Hyoung, Kim, Hyunsung, Shim, Jong-In, Shin, Dong-Soo, Kim, Kyu-Sang
Format: Article
Language:English
Subjects:
Applied physics
Carrier recombination
Efficiency
ELECTROLUMINESCENCE
GALLIUM NITRIDES
Indium gallium nitrides
LIGHT EMITTING DIODES
MATERIALS SCIENCE
Organic light emitting diodes
QUANTUM EFFICIENCY
RECOMBINATION
TEMPERATURE DEPENDENCE
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Summary:Two kinds of InGaN-based light-emitting diodes (LEDs) are investigated to understand the nonradiative carrier recombination processes. Various temperature-dependent measurements such as external quantum efficiency, current-voltage, and electroluminescence spectra are utilized from 50 to 300 K. Based on these experimental results, we analyze the dominant nonradiative recombination mechanism for each LED device. We also analyze the effect of the dominant nonradiative recombination mechanism on the efficiency droop. On the basis of correlation between the efficiency droop and nonradiative recombination mechanisms, we discuss an approach to reducing the efficiency droop for each LED device.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4871870