N-V{sub Si}-related center in non-irradiated 6H SiC nanostructure

• Published in: AIP conference proceedings 2014-02, Vol.1583 (1)
• Main Authors: Bagraev, Nikolay, Danilovskii, Eduard, Gets, Dmitrii, Klyachkin, Leonid, Malyarenko, Anna, Kalabukhova, Ekaterina, Shanina, Bella, Savchenko, Dariya
• Format: Article
• Language: English
• Subjects: ANISOTROPY; BORON; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DOPED MATERIALS; ELECTRON SPIN RESONANCE; INTERACTIONS; IRRADIATION; MAGNETORESISTANCE; NANOSCIENCE AND NANOTECHNOLOGY; QUANTUM WELLS; SILICON; SILICON CARBIDES; SPECTRA; TRIPLETS
• ISSN: 0094-243X; 1551-7616
• DOI: 10.1063/1.4865645

We present the first findings of the vacancy-related centers identified by the electron spin resonance (ESR) and electrically-detected (ED) ESR method in the non-irradiated 6H-SiC nanostructure. This planar 6H-SiC nanostructure represents the ultra-narrow p-type quantum well confined by the δ-barriers heavily doped with boron on the surface of the n-type 6H-SiC (0001) wafer. The EDESR method by measuring the only magnetoresistance of the 6H SiC nanostructure under the high frequency generation from the δ-barriers appears to allow the identification of the silicon vacancy centers as well as the triplet center with spin state S=1. The same triplet center that is characterized by the larger value of the zero-field splitting constant D and anisotropic g-factor is revealed by the ESR (X-band) method. The hyperfine (hf) lines in the ESR and EDESR spectra originating from the hf interaction with the {sup 14}N nucleus allow us to attribute this triplet center to the N-V{sub Si} defect.