Defect level characterization of silicon nanowire arrays: Towards novel experimental paradigms

The huge amount of knowledge, and infrastructures, brought by silicon (Si) technology, make Si Nanowires (NWs) an ideal choice for nano-electronic Si-based devices. This, in turn, challenges the scientific research to adapt the technical and theoretical paradigms, at the base of established experime...

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Bibliographic Details
Main Authors: Carapezzi Stefania, Castaldini Antonio, Irrera Alessia, Cavallini, Anna
Format: Conference Proceeding
Language:English
Subjects:
Arrays
ASPECT RATIO
Chemical etching
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DEEP LEVEL TRANSIENT SPECTROSCOPY
DEFECTS
DIFFUSION
Diffusion effects
DOPED MATERIALS
Electronic devices
ELECTRONIC STRUCTURE
High aspect ratio
Nanowires
Organic chemistry
QUANTUM WIRES
SILICON
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Summary:The huge amount of knowledge, and infrastructures, brought by silicon (Si) technology, make Si Nanowires (NWs) an ideal choice for nano-electronic Si-based devices. This, in turn, challenges the scientific research to adapt the technical and theoretical paradigms, at the base of established experimental techniques, in order to probe the properties of these systems. Metal-assisted wet-Chemical Etching (MaCE) [1, 2] is a promising fast, easy and cheap method to grow high aspect-ratio aligned Si NWs. Further, contrary to other fabrication methods, this method avoids the possible detrimental effects related to Au diffusion into NWs. We investigated the bandgap level diagram of MaCE Si NW arrays, phosphorous-doped, by means of Deep Level Transient Spectroscopy. The presence of both shallow and deep levels has been detected. The results have been examined in the light of the specificity of the MaCE growth. The study of the electronic levels in Si NWs is, of course, of capital importance in view of the integration of Si NW arrays as active layers in actual devices.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.4865649