Carrier capture efficiency in InGaN/GaN LEDs: Role of high temperature annealing

By means of time integrated (TI), time-resolved (TR) photoluminescence (PL) and PL excitation spectra, we investigate the role of an high temperature post-growth thermal annealing (TA) on a set of InGaN/GaN LED structures with different dislocation densities. We provide evidence of the nature of the...

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Bibliographic Details
Main Authors: Vinattieri, A, Batignani, F, Bogani, F, Meneghini, M, Meneghesso, G, Zanoni, E, Zhu, D, Humphreys, C J
Format: Conference Proceeding
Language:English
Subjects:
ANNEALING
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DENSITY
Dislocation density
DISLOCATIONS
EFFICIENCY
Excitation spectra
GALLIUM NITRIDES
High temperature
Indium gallium nitrides
PHOTOLUMINESCENCE
Radiative recombination
Radioactivity
RECOMBINATION
SPECTRA
TEMPERATURE RANGE 0400-1000 K
TIME RESOLUTION
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Summary:By means of time integrated (TI), time-resolved (TR) photoluminescence (PL) and PL excitation spectra, we investigate the role of an high temperature post-growth thermal annealing (TA) on a set of InGaN/GaN LED structures with different dislocation densities. We provide evidence of the nature of the radiative recombination from a wide distribution of non-interacting localised states and we show the beneficial effect of thermal annealing in reducing the contribution of non-radiative recombination in the well region.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.4865653