The interaction between divacancies and shallow dopants in irradiated Ge:Sn

It has been found that upon annealing of irradiated Ge doped with gallium and Sn simultaneously with disappearance of divacancies V20 the appearance of the new absorption spectrum consisting of sharp lines was observed. The spectrum is identical to the absorption spectrum of gallium. It is shown tha...

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Bibliographic Details
Main Authors: Khirunenko, L I, Pomozov, Yu V, Sosnin, M G, Abrosimov, N V, Riemann, H
Format: Conference Proceeding
Language:English
Subjects:
ABSORPTION SPECTRA
ANNEALING
BINDING ENERGY
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DEFECTS
Divacancies
DOPED MATERIALS
EFFECTIVE MASS
GALLIUM
Germanium
GROUND STATES
HYDROGEN
INTERACTIONS
IRRADIATION
RESONANCE
Tin
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Summary:It has been found that upon annealing of irradiated Ge doped with gallium and Sn simultaneously with disappearance of divacancies V20 the appearance of the new absorption spectrum consisting of sharp lines was observed. The spectrum is identical to the absorption spectrum of gallium. It is shown that the defect, to which the new spectrum corresponds, has hydrogen-like properties. The distances between the lines in the spectrum are in good agreement with those predicted by effective-mass theory. The appearance of Fano resonance in the continuum region in addition to intracenter transitions of the defect was detected. The defect found is identified as SnV20Ga. The binding energy for the ground state of the SnV20Ga centers has been estimated.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.4865608