Low-frequency 1/f noise in MoS{sub 2} transistors: Relative contributions of the channel and contacts

• Published in: Applied physics letters 2014-04, Vol.104 (15)
• Main Authors: Renteria, J., Jiang, C., Samnakay, R., Rumyantsev, S. L., Ioffe Physical-Technical Institute, St. Petersburg 194021, Goli, P., Balandin, A. A., Materials Science and Engineering Program, Bourns College of Engineering, University of California – Riverside, Riverside, California 92521, Shur, M. S.
• Format: Article
• Language: English
• Subjects: AGING; ENGINEERING; EVALUATION; FIELD EFFECT TRANSISTORS; FLUCTUATIONS; GOLD; GRAPHENE; MOLYBDENUM SULFIDES; NANOSCIENCE AND NANOTECHNOLOGY; NOISE; TITANIUM
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.4871374

We report on the results of the low-frequency (1/f, where f is frequency) noise measurements in MoS{sub 2} field-effect transistors revealing the relative contributions of the MoS{sub 2} channel and Ti/Au contacts to the overall noise level. The investigation of the 1/f noise was performed for both as fabricated and aged transistors. It was established that the McWhorter model of the carrier number fluctuations describes well the 1/f noise in MoS{sub 2} transistors, in contrast to what is observed in graphene devices. The trap densities extracted from the 1/f noise data for MoS{sub 2} transistors, are 2 × 10{sup 19} eV{sup −1}cm{sup −3} and 2.5 × 10{sup 20} eV{sup −1}cm{sup −3} for the as fabricated and aged devices, respectively. It was found that the increase in the noise level of the aged MoS{sub 2} transistors is due to the channel rather than the contact degradation. The obtained results are important for the proposed electronic applications of MoS{sub 2} and other van der Waals materials.