Structure and electrical characterization of gallium arsenide nanowires with different V/III ratio growth parameters

Gallium arsenide (GaAs) nanowires were grown vertically on GaAs(111)B substrate by gold-assisted using metal-organic chemical vapour deposition. Field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and conductivity atomic force microscopy (CAFM) analysis were...

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Bibliographic Details
Main Authors: Muhammad, R, Ahamad, R, Ibrahim, Z, Othaman, Z
Format: Conference Proceeding
Language:English
Subjects:
Arsenides
ATOMIC FORCE MICROSCOPY
CHEMICAL VAPOR DEPOSITION
CRYSTAL STRUCTURE
ELECTRIC POTENTIAL
Electrical properties
Electrical resistivity
FIELD EMISSION
Gallium arsenide
GALLIUM ARSENIDES
Gold
Intermetallic compounds
MATERIALS SCIENCE
Metalorganic chemical vapor deposition
Microscopy
NANOSCIENCE AND NANOTECHNOLOGY
Nanowires
Organic chemicals
Organic chemistry
ORGANOMETALLIC COMPOUNDS
OSCILLATIONS
Photovoltaic cells
QUANTUM WIRES
SCANNING ELECTRON MICROSCOPY
Silicon
SOLAR CELLS
Structural analysis
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY
Wurtzite
ZINC SULFIDES
Zincblende
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Description
Summary:Gallium arsenide (GaAs) nanowires were grown vertically on GaAs(111)B substrate by gold-assisted using metal-organic chemical vapour deposition. Field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and conductivity atomic force microscopy (CAFM) analysis were carried out to investigate the effects of V/III ratio on structural properties and current-voltage changes in the wires. Results show that GaAs NWs grow preferably in the wurtzite crystal structure than zinc blende crystal structure with increasing V/III ratio. Additionally, CAFM studies have revealed that zincblende nanowires indicate ohmic characteristic compared to oscillation current occurred for wurtzite structures. The GaAs NWs with high quality structures are needed in solar cells technology for trapping energy that directly converts of sunlight into electricity with maximum capacity.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.4866956