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Structure and electrical characterization of gallium arsenide nanowires with different V/III ratio growth parameters
Gallium arsenide (GaAs) nanowires were grown vertically on GaAs(111)B substrate by gold-assisted using metal-organic chemical vapour deposition. Field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and conductivity atomic force microscopy (CAFM) analysis were...
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| creator | Muhammad, R Ahamad, R Ibrahim, Z Othaman, Z |
| description | Gallium arsenide (GaAs) nanowires were grown vertically on GaAs(111)B substrate by gold-assisted using metal-organic chemical vapour deposition. Field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and conductivity atomic force microscopy (CAFM) analysis were carried out to investigate the effects of V/III ratio on structural properties and current-voltage changes in the wires. Results show that GaAs NWs grow preferably in the wurtzite crystal structure than zinc blende crystal structure with increasing V/III ratio. Additionally, CAFM studies have revealed that zincblende nanowires indicate ohmic characteristic compared to oscillation current occurred for wurtzite structures. The GaAs NWs with high quality structures are needed in solar cells technology for trapping energy that directly converts of sunlight into electricity with maximum capacity. |
| doi_str_mv | 10.1063/1.4866956 |
| format | conference_proceeding |
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Field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and conductivity atomic force microscopy (CAFM) analysis were carried out to investigate the effects of V/III ratio on structural properties and current-voltage changes in the wires. Results show that GaAs NWs grow preferably in the wurtzite crystal structure than zinc blende crystal structure with increasing V/III ratio. Additionally, CAFM studies have revealed that zincblende nanowires indicate ohmic characteristic compared to oscillation current occurred for wurtzite structures. The GaAs NWs with high quality structures are needed in solar cells technology for trapping energy that directly converts of sunlight into electricity with maximum capacity.</description><identifier>ISSN: 0094-243X</identifier><identifier>EISSN: 1551-7616</identifier><identifier>DOI: 10.1063/1.4866956</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Arsenides ; ATOMIC FORCE MICROSCOPY ; CHEMICAL VAPOR DEPOSITION ; CRYSTAL STRUCTURE ; ELECTRIC POTENTIAL ; Electrical properties ; Electrical resistivity ; FIELD EMISSION ; Gallium arsenide ; GALLIUM ARSENIDES ; Gold ; Intermetallic compounds ; MATERIALS SCIENCE ; Metalorganic chemical vapor deposition ; Microscopy ; NANOSCIENCE AND NANOTECHNOLOGY ; Nanowires ; Organic chemicals ; Organic chemistry ; ORGANOMETALLIC COMPOUNDS ; OSCILLATIONS ; Photovoltaic cells ; QUANTUM WIRES ; SCANNING ELECTRON MICROSCOPY ; Silicon ; SOLAR CELLS ; Structural analysis ; SUBSTRATES ; TRANSMISSION ELECTRON MICROSCOPY ; Wurtzite ; ZINC SULFIDES ; Zincblende</subject><ispartof>AIP conference proceedings, 2014, Vol.1588 (1), p.260</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c251t-75f82aaafb13ce4364842ae3c8490b24ebf9409eb0f7b89756cfeac3fac6c0e83</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,309,310,314,778,782,787,788,883,23913,23914,25123,27907,27908</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22266016$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Muhammad, R</creatorcontrib><creatorcontrib>Ahamad, R</creatorcontrib><creatorcontrib>Ibrahim, Z</creatorcontrib><creatorcontrib>Othaman, Z</creatorcontrib><title>Structure and electrical characterization of gallium arsenide nanowires with different V/III ratio growth parameters</title><title>AIP conference proceedings</title><description>Gallium arsenide (GaAs) nanowires were grown vertically on GaAs(111)B substrate by gold-assisted using metal-organic chemical vapour deposition. Field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and conductivity atomic force microscopy (CAFM) analysis were carried out to investigate the effects of V/III ratio on structural properties and current-voltage changes in the wires. Results show that GaAs NWs grow preferably in the wurtzite crystal structure than zinc blende crystal structure with increasing V/III ratio. Additionally, CAFM studies have revealed that zincblende nanowires indicate ohmic characteristic compared to oscillation current occurred for wurtzite structures. The GaAs NWs with high quality structures are needed in solar cells technology for trapping energy that directly converts of sunlight into electricity with maximum capacity.</description><subject>Arsenides</subject><subject>ATOMIC FORCE MICROSCOPY</subject><subject>CHEMICAL VAPOR DEPOSITION</subject><subject>CRYSTAL STRUCTURE</subject><subject>ELECTRIC POTENTIAL</subject><subject>Electrical properties</subject><subject>Electrical resistivity</subject><subject>FIELD EMISSION</subject><subject>Gallium arsenide</subject><subject>GALLIUM ARSENIDES</subject><subject>Gold</subject><subject>Intermetallic compounds</subject><subject>MATERIALS SCIENCE</subject><subject>Metalorganic chemical vapor deposition</subject><subject>Microscopy</subject><subject>NANOSCIENCE AND NANOTECHNOLOGY</subject><subject>Nanowires</subject><subject>Organic chemicals</subject><subject>Organic chemistry</subject><subject>ORGANOMETALLIC COMPOUNDS</subject><subject>OSCILLATIONS</subject><subject>Photovoltaic cells</subject><subject>QUANTUM WIRES</subject><subject>SCANNING ELECTRON MICROSCOPY</subject><subject>Silicon</subject><subject>SOLAR CELLS</subject><subject>Structural analysis</subject><subject>SUBSTRATES</subject><subject>TRANSMISSION ELECTRON MICROSCOPY</subject><subject>Wurtzite</subject><subject>ZINC SULFIDES</subject><subject>Zincblende</subject><issn>0094-243X</issn><issn>1551-7616</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2014</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNpFj0tLAzEcxIMoWKsHv0HA87Z5bZI9SvGxUPDgA29LNv2nTdkmmmQp-OldUfA0h5n5MYPQNSULSiRf0oXQUja1PEEzWte0UpLKUzQjpBEVE_z9HF3kvCeENUrpGSrPJY22jAmwCRsMA9iSvDUDtjuTjC2Q_JcpPgYcHd6aYfDjAZuUIfgN4GBCPPoEGR992eGNdw4ShILflm3b4vTTxNsUj5P5MfEOMAHzJTpzZshw9adz9Hp_97J6rNZPD-3qdl1ZVtNSqdppZoxxPeUWBJdCC2aAWy0a0jMBvWsEaaAnTvW6UbW0DozlzlhpCWg-Rze_3JiL77L1BezOxhCmkx1jTEpC5X_qI8XPEXLp9nFMYRrWMcqUVooxzb8BN6hq0Q</recordid><startdate>20140305</startdate><enddate>20140305</enddate><creator>Muhammad, R</creator><creator>Ahamad, R</creator><creator>Ibrahim, Z</creator><creator>Othaman, Z</creator><general>American Institute of Physics</general><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20140305</creationdate><title>Structure and electrical characterization of gallium arsenide nanowires with different V/III ratio growth parameters</title><author>Muhammad, R ; Ahamad, R ; Ibrahim, Z ; Othaman, Z</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c251t-75f82aaafb13ce4364842ae3c8490b24ebf9409eb0f7b89756cfeac3fac6c0e83</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Arsenides</topic><topic>ATOMIC FORCE MICROSCOPY</topic><topic>CHEMICAL VAPOR DEPOSITION</topic><topic>CRYSTAL STRUCTURE</topic><topic>ELECTRIC POTENTIAL</topic><topic>Electrical properties</topic><topic>Electrical resistivity</topic><topic>FIELD EMISSION</topic><topic>Gallium arsenide</topic><topic>GALLIUM ARSENIDES</topic><topic>Gold</topic><topic>Intermetallic compounds</topic><topic>MATERIALS SCIENCE</topic><topic>Metalorganic chemical vapor deposition</topic><topic>Microscopy</topic><topic>NANOSCIENCE AND NANOTECHNOLOGY</topic><topic>Nanowires</topic><topic>Organic chemicals</topic><topic>Organic chemistry</topic><topic>ORGANOMETALLIC COMPOUNDS</topic><topic>OSCILLATIONS</topic><topic>Photovoltaic cells</topic><topic>QUANTUM WIRES</topic><topic>SCANNING ELECTRON MICROSCOPY</topic><topic>Silicon</topic><topic>SOLAR CELLS</topic><topic>Structural analysis</topic><topic>SUBSTRATES</topic><topic>TRANSMISSION ELECTRON MICROSCOPY</topic><topic>Wurtzite</topic><topic>ZINC SULFIDES</topic><topic>Zincblende</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Muhammad, R</creatorcontrib><creatorcontrib>Ahamad, R</creatorcontrib><creatorcontrib>Ibrahim, Z</creatorcontrib><creatorcontrib>Othaman, Z</creatorcontrib><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Muhammad, R</au><au>Ahamad, R</au><au>Ibrahim, Z</au><au>Othaman, Z</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Structure and electrical characterization of gallium arsenide nanowires with different V/III ratio growth parameters</atitle><btitle>AIP conference proceedings</btitle><date>2014-03-05</date><risdate>2014</risdate><volume>1588</volume><issue>1</issue><epage>260</epage><issn>0094-243X</issn><eissn>1551-7616</eissn><abstract>Gallium arsenide (GaAs) nanowires were grown vertically on GaAs(111)B substrate by gold-assisted using metal-organic chemical vapour deposition. Field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and conductivity atomic force microscopy (CAFM) analysis were carried out to investigate the effects of V/III ratio on structural properties and current-voltage changes in the wires. Results show that GaAs NWs grow preferably in the wurtzite crystal structure than zinc blende crystal structure with increasing V/III ratio. Additionally, CAFM studies have revealed that zincblende nanowires indicate ohmic characteristic compared to oscillation current occurred for wurtzite structures. The GaAs NWs with high quality structures are needed in solar cells technology for trapping energy that directly converts of sunlight into electricity with maximum capacity.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4866956</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0094-243X |
| ispartof | AIP conference proceedings, 2014, Vol.1588 (1), p.260 |
| issn | 0094-243X 1551-7616 |
| language | eng |
| recordid | cdi_osti_scitechconnect_22266016 |
| source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list) |
| subjects | Arsenides ATOMIC FORCE MICROSCOPY CHEMICAL VAPOR DEPOSITION CRYSTAL STRUCTURE ELECTRIC POTENTIAL Electrical properties Electrical resistivity FIELD EMISSION Gallium arsenide GALLIUM ARSENIDES Gold Intermetallic compounds MATERIALS SCIENCE Metalorganic chemical vapor deposition Microscopy NANOSCIENCE AND NANOTECHNOLOGY Nanowires Organic chemicals Organic chemistry ORGANOMETALLIC COMPOUNDS OSCILLATIONS Photovoltaic cells QUANTUM WIRES SCANNING ELECTRON MICROSCOPY Silicon SOLAR CELLS Structural analysis SUBSTRATES TRANSMISSION ELECTRON MICROSCOPY Wurtzite ZINC SULFIDES Zincblende |
| title | Structure and electrical characterization of gallium arsenide nanowires with different V/III ratio growth parameters |
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