Multiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substrates

The multiexciton properties of extrinsic centers from AlGaAs layers on Ge and Si substrates are addressed. The two photon cascade is found both in steady state and in time resolved experiments. Polarization analysis of the photoluminescence provides clearcut attribution to neutral biexciton complexe...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 2013-12, Vol.114 (22)
Main Authors: Sarti, F., Muñoz Matutano, G., Bauer, D., Dotti, N., Bietti, S., Isella, G., Vinattieri, A., Sanguinetti, S., Gurioli, M.
Format: Article
Language:English
Subjects:
ALUMINIUM ARSENIDES
Aluminum gallium arsenides
Applied physics
Clearcutting
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
GALLIUM ARSENIDES
Germanium
PHOTOLUMINESCENCE
PHOTONS
QUANTUM ENTANGLEMENT
Silicon substrates
STEADY-STATE CONDITIONS
SUBSTRATES
TIME RESOLUTION
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The multiexciton properties of extrinsic centers from AlGaAs layers on Ge and Si substrates are addressed. The two photon cascade is found both in steady state and in time resolved experiments. Polarization analysis of the photoluminescence provides clearcut attribution to neutral biexciton complexes. Our findings demonstrate the prospect of exploiting extrinsic centers for generating entangled photon pairs on a Si based device.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4844375