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Confirmation of intrinsic electron gap states at nonpolar GaN(1-100) surfaces combining photoelectron and surface optical spectroscopy
The electronic structure of GaN(1–100) surfaces is investigated in-situ by photoelectron spectroscopy (PES) and reflection anisotropy spectroscopy (RAS). Occupied surface states 3.1 eV below the Fermi energy are observed by PES, accompanied by surface optical transitions found in RAS around 3.3 eV,...
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| Published in: | Applied physics letters 2014-04, Vol.104 (17) |
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| Main Authors: | , , , , , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c351t-7320c2a06f6fbe3caa9d3ecc5d98b4c6dbeafbdfef2f501a6327ded18ec7eb643 |
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| cites | cdi_FETCH-LOGICAL-c351t-7320c2a06f6fbe3caa9d3ecc5d98b4c6dbeafbdfef2f501a6327ded18ec7eb643 |
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| container_issue | 17 |
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| container_title | Applied physics letters |
| container_volume | 104 |
| creator | Himmerlich, M. Eisenhardt, A. Shokhovets, S. Krischok, S. Räthel, J. Speiser, E. Neumann, M. D. Navarro-Quezada, A. Esser, N. |
| description | The electronic structure of GaN(1–100) surfaces is investigated in-situ by photoelectron spectroscopy (PES) and reflection anisotropy spectroscopy (RAS). Occupied surface states 3.1 eV below the Fermi energy are observed by PES, accompanied by surface optical transitions found in RAS around 3.3 eV, i.e., below the bulk band gap. These results indicate that the GaN(1–100) surface band gap is smaller than the bulk one due to the existence of intra-gap states, in agreement with density functional theory calculations. Furthermore, the experiments demonstrate that RAS can be applied for optical surface studies of anisotropic crystals. |
| doi_str_mv | 10.1063/1.4873376 |
| format | article |
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Furthermore, the experiments demonstrate that RAS can be applied for optical surface studies of anisotropic crystals.</description><subject>Anisotropy</subject><subject>Applied physics</subject><subject>CRYSTALS</subject><subject>DENSITY FUNCTIONAL METHOD</subject><subject>Density functional theory</subject><subject>ELECTRONIC STRUCTURE</subject><subject>Energy gap</subject><subject>GALLIUM NITRIDES</subject><subject>MATERIALS SCIENCE</subject><subject>PHOTOELECTRON SPECTROSCOPY</subject><subject>Spectroscopy</subject><subject>Spectrum analysis</subject><subject>SURFACES</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpFkc1OwzAQhC0EEqVw4A0scaGHFP8kdnpEFRSkCi5wtpyN3bpK7WC7h74Az02gBU6r3fk0mtUgdE3JlBLB7-i0rCXnUpygESVSFpzS-hSNCCG8ELOKnqOLlDbDWjHOR-hzHrx1cauzCx4Hi53P0fnkAJvOQI7DdaV7nLLOJmGdsQ--D52OeKFfbmlBCZngtItWw6BD2DbOO7_C_Trk8GehffsL4dBnB7rDqf8RE4R-f4nOrO6SuTrOMXp_fHibPxXL18Xz_H5ZAK9oLiRnBJgmwgrbGA5az1puAKp2VjcliLYx2jatNZbZilAtOJOtaWltQJpGlHyMbg6-IWWnErhsYA3B-yGKYowJKUvyT_UxfOxMymoTdtEPwRSjTArJyIwN1ORAwfBEisaqPrqtjntFifouQ1F1LIN_AeC0fpY</recordid><startdate>20140428</startdate><enddate>20140428</enddate><creator>Himmerlich, M.</creator><creator>Eisenhardt, A.</creator><creator>Shokhovets, S.</creator><creator>Krischok, S.</creator><creator>Räthel, J.</creator><creator>Speiser, E.</creator><creator>Neumann, M. 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| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2014-04, Vol.104 (17) |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_osti_scitechconnect_22267740 |
| source | American Institute of Physics (AIP) Publications; American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list) |
| subjects | Anisotropy Applied physics CRYSTALS DENSITY FUNCTIONAL METHOD Density functional theory ELECTRONIC STRUCTURE Energy gap GALLIUM NITRIDES MATERIALS SCIENCE PHOTOELECTRON SPECTROSCOPY Spectroscopy Spectrum analysis SURFACES |
| title | Confirmation of intrinsic electron gap states at nonpolar GaN(1-100) surfaces combining photoelectron and surface optical spectroscopy |
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