Modulation of over 10{sup 14} cm{sup −2} electrons in SrTiO{sub 3}/GdTiO{sub 3} heterostructures

We demonstrate charge modulation of over 10{sup 14} cm{sup −2} electrons in a two-dimensional electron gas formed in SrTiO{sub 3}/GdTiO{sub 3} inverted heterostructure field-effect transistors. Increased charge modulation was achieved by reducing the effect of interfacial region capacitances through...

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Bibliographic Details
Published in:Applied physics letters 2014-05, Vol.104 (18)
Main Authors: Boucherit, M., Shoron, O., Polchinski, C., Jackson, C. A., Cain, T. A., Buffon, M. L. C., Stemmer, S., Rajan, S., Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210
Format: Article
Language:English
Subjects:
CAPACITANCE
DOPED MATERIALS
ELECTRONS
FIELD EFFECT TRANSISTORS
GADOLINIUM
MATERIALS SCIENCE
MODULATION
STRONTIUM TITANATES
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Summary:We demonstrate charge modulation of over 10{sup 14} cm{sup −2} electrons in a two-dimensional electron gas formed in SrTiO{sub 3}/GdTiO{sub 3} inverted heterostructure field-effect transistors. Increased charge modulation was achieved by reducing the effect of interfacial region capacitances through thick SrTiO{sub 3} cap layers. Transport and device characteristics of the heterostructure field-effect transistors were found to match a long channel field effect transistor model. SrTiO{sub 3} impurity doped metal–semiconductor field effect transistors were also demonstrated with excellent pinch-off and current density exceeding prior reports. The work reported here provides a path towards oxide-based electronics with extreme charge modulation exceeding 10{sup 14} cm{sup −2}.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4875796