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Modulation of over 10{sup 14} cm{sup −2} electrons in SrTiO{sub 3}/GdTiO{sub 3} heterostructures
We demonstrate charge modulation of over 10{sup 14} cm{sup −2} electrons in a two-dimensional electron gas formed in SrTiO{sub 3}/GdTiO{sub 3} inverted heterostructure field-effect transistors. Increased charge modulation was achieved by reducing the effect of interfacial region capacitances through...
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| Published in: | Applied physics letters 2014-05, Vol.104 (18) |
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| Main Authors: | , , , , , , , , |
| Format: | Article |
| Language: | English |
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| container_issue | 18 |
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| container_title | Applied physics letters |
| container_volume | 104 |
| creator | Boucherit, M. Shoron, O. Polchinski, C. Jackson, C. A. Cain, T. A. Buffon, M. L. C. Stemmer, S. Rajan, S. Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 |
| description | We demonstrate charge modulation of over 10{sup 14} cm{sup −2} electrons in a two-dimensional electron gas formed in SrTiO{sub 3}/GdTiO{sub 3} inverted heterostructure field-effect transistors. Increased charge modulation was achieved by reducing the effect of interfacial region capacitances through thick SrTiO{sub 3} cap layers. Transport and device characteristics of the heterostructure field-effect transistors were found to match a long channel field effect transistor model. SrTiO{sub 3} impurity doped metal–semiconductor field effect transistors were also demonstrated with excellent pinch-off and current density exceeding prior reports. The work reported here provides a path towards oxide-based electronics with extreme charge modulation exceeding 10{sup 14} cm{sup −2}. |
| doi_str_mv | 10.1063/1.4875796 |
| format | article |
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SrTiO{sub 3} impurity doped metal–semiconductor field effect transistors were also demonstrated with excellent pinch-off and current density exceeding prior reports. 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SrTiO{sub 3} impurity doped metal–semiconductor field effect transistors were also demonstrated with excellent pinch-off and current density exceeding prior reports. 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SrTiO{sub 3} impurity doped metal–semiconductor field effect transistors were also demonstrated with excellent pinch-off and current density exceeding prior reports. The work reported here provides a path towards oxide-based electronics with extreme charge modulation exceeding 10{sup 14} cm{sup −2}.</abstract><cop>United States</cop><doi>10.1063/1.4875796</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2014-05, Vol.104 (18) |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_osti_scitechconnect_22269189 |
| source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); American Institute of Physics(アメリカ物理学協会) |
| subjects | CAPACITANCE DOPED MATERIALS ELECTRONS FIELD EFFECT TRANSISTORS GADOLINIUM MATERIALS SCIENCE MODULATION STRONTIUM TITANATES |
| title | Modulation of over 10{sup 14} cm{sup −2} electrons in SrTiO{sub 3}/GdTiO{sub 3} heterostructures |
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