Optically activated sub-millimeter dielectric relaxation in amorphous thin film silicon at room temperature

Knowing the frequency-dependent photo-induced complex conductivity of thin films is useful in the design of photovoltaics and other semi-conductor devices. For example, annealing in the far-infrared could in principle be tailored to the specific dielectric properties of a particular sample. The freq...

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Bibliographic Details
Published in:Applied physics letters 2014-05, Vol.104 (18)
Main Authors: Rahman, Rezwanur, Ohno, Tim R., Taylor, P. C., Scales, John A.
Format: Article
Language:English
Subjects:
Amorphous silicon
Applied physics
CAVITY RESONATORS
Clean energy
Conductivity
CONDUCTOR DEVICES
Conductors
DIELECTRIC MATERIALS
DIELECTRIC PROPERTIES
Dielectric relaxation
FREQUENCY DEPENDENCE
MATERIALS SCIENCE
Microwave frequencies
Noise sensitivity
Photovoltaic cells
Q factors
RELAXATION
Room temperature
SILICON
Silicon films
Solar cells
Temperature dependence
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
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Summary:Knowing the frequency-dependent photo-induced complex conductivity of thin films is useful in the design of photovoltaics and other semi-conductor devices. For example, annealing in the far-infrared could in principle be tailored to the specific dielectric properties of a particular sample. The frequency dependence of the conductivity (whether dark or photo-induced) also gives insight into the effective dimensionality of thin films (via the phonon density of states) as well as the presence (or absence) of free carriers, dopants, defects, etc. Ultimately, our goal is to make low-noise, phase-sensitive room temperature measurements of the frequency-dependent conductivity of thin films from microwave frequencies into the far-infrared; covering, the frequency range from ionic and dipole relaxation to atomic and electronic processes. To this end, we have developed a high-Q (quality factor) open cavity resonator capable of resolving the complex conductivity of sub-micron films in the range of 100–350 GHz (0.1–0.35 THz, or 0.4–1 meV). In this paper, we use a low-power green laser to excite bound charges in high-resistivity amorphous silicon thin film. Even at room temperature, we can resolve both the dark conductivity and photo-induced changes associated with dielectric relaxation and possibly some small portion of free carriers.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4874847