Variation of carrier concentration and interface trap density in 8MeV electron irradiated c-Si solar cells

The capacitance and conductance measurements were carried out for c-Si solar cells, irradiated with 8 MeV electrons with doses ranging from 5kGy – 100kGy in order to investigate the anomalous degradation of the cells in the radiation harsh environments. Capacitance – Voltage measurements indicate th...

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Bibliographic Details
Main Authors: Bhat Sathyanarayana, Rao, Asha, Krishnan Sheeja, Ganesh, Sanjeev, Suresh, E P
Format: Conference Proceeding
Language:English
Subjects:
Capacitance
Carrier density
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DENSITY
DOSES
ELECTRIC POTENTIAL
Electrical measurement
Electron irradiation
ELECTRONS
IRRADIATION
Photovoltaic cells
Radiation effects
Resistance
SOLAR CELLS
Time constant
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Summary:The capacitance and conductance measurements were carried out for c-Si solar cells, irradiated with 8 MeV electrons with doses ranging from 5kGy – 100kGy in order to investigate the anomalous degradation of the cells in the radiation harsh environments. Capacitance – Voltage measurements indicate that there is a slight reduction in the carrier concentration upon electron irradiation due to the creation of radiation induced defects. The conductance measurement results reveal that the interface state densities and the trap time constant increases with electron dose due to displacement damages in c-Si solar cells.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.4872993